Boundary Homogenization of Kinetic and Fluid Models for
Thin Film Deposition
Abstract
Chemical vapor deposition is used in the manufacturing of semiconductor
chips to deposit thin layers of solid material on the
surface of the wafer. The layer material is obtained from
gaseous chemicals via surface reactions. At the very low
pressures in use, the mean free path of reacting gas
particles in chemical vapor deposition is large compared to the
typical dimension of the chip components. Thus, the flow must
be described by a kinetic model in a thin layer above the
wafer surface. Using a homogenization technique for the ballistic flow
close to the surface, a boundary condition is obtained which allows
for numerical simulation on scales much larger than that of individual
transistors.
